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The annealing temperature ͑T A ͒ dependence of capacitance-voltage ͑C-V͒ characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals ͑NCs͒ produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiationdoi:10.1063/1.2168249 fatcat:hs6k4p2urzeu5hzcrbpxbt6m5a