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I-V Characteristics Model for AlGaN / GaN HEMTs Using Tcad-Silvaco
Journal of New Technology and Materials
We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software. Drift-diffusion model has taken for simulating the proposed device. we use SiC as a substrate for this structure, The channel is made of GaN and source-drain spacing is 1 µm.doi:10.12816/0010326 fatcat:2qktsnb72vf7jlmg4ne4n2jnga