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Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
IEEE Transactions on Electron Devices
It is, by now, well known that McIntyre's localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche photodiodes (APDs) that make use of thin multiplication regions. We demonstrate that a carrier multiplication model that incorporates the effects of dead space, as developed earlier by Hayat et al. provides excellent agreement with the impact-ionization and noise characteristics of thin InP, In 0 52 Al 0 48 As, GaAs, and Al 0 2 Ga 0 8 Asdoi:10.1109/16.974696 fatcat:rv3h7mjftfc5dn4v26i7zutove