Device Performance Analysis of Graphene Nanoribbon Field-Effect Transistor with Rare-Earth Oxide (La2O3) Based High-k Gate Dielectric

M. K. Bera
2018 International Journal for Research in Applied Science and Engineering Technology  
Graphene nanoribbon field-effect transistors (GNRFETs) are promising devices for beyond-CMOS nano electronics in favor of logic applications because GNR offers high mobility for ballistic transport, high carrier velocity for fast switching, monolayer thin body for optimum electrostatic scaling, and excellent thermal conductivity. In this study, the device performance and limitations of GNRFETs are investigated by reducing the channel length below 10 nm. The double gate GNRFET structure is
more » ... ered where the armchair GNR is sandwiched between two ultrathin La 2 O 3 high-k gate dielectrics. The double gate geometry together with CMOS compatible La 2 O 3 high-k dielectric offers large gate electrostatic control and consequently large insulator capacitance, which lead to the operation of GNRFET close to quantum capacitance limit. The simulation study was performed using self-consistent solution of the 3D Poisson equation and 1D Schrödinger equation within the non-equilibrium Green's function formalism.
doi:10.22214/ijraset.2018.1257 fatcat:t5dvdty7bnc3vo2lxwjbtds3oa