Preventing single event latchup with deep P-well on P-substrate

T. Uemura, T. Kato, R. Tanabe, H. Iwata, H. Matsuyama, M. Hashimoto, K. Takahisa, M. Fukuda, K. Hatanaka
2014 2014 IEEE International Reliability Physics Symposium  
We propose a method that prevents single event latchup (SEL) using deep P-well on P-substrate. To confirm the effectiveness of the proposed method, SEL and single event upset (SEU) are evaluated for three well configurations; double-well, ordinary triple-well and the proposed deep P-well on P-substrate. Neutron irradiation test shows that the proposed method achieves SEL prevention without SEU increase.
doi:10.1109/irps.2014.6861175 fatcat:ltbv7b75dzahbohpqyprq4l3vy