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The effect of vacancies and the substitution of p-block atoms on single-layer buckled germanium selenide
2017
RSC Advances
This paper investigates the effect of point defects of both hole (Ge, Se) and substitution doping of p-block elements, in single-layer b-GeSe, based on first principles plane wave calculations within spin-polarized density functional theory.
doi:10.1039/c7ra05099b
fatcat:womuarmk4bfhbecfmpxgjtlyaa