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AbstractThe microstructure of interconnect material is know to influence its electromigration and stress-voiding properties. In addition to many factors responsible for the microstructure development, the barrier layer could be a major contributing factor as it forms the substrate for the copper films above. The microstructure of the barrier films based on its deposition technique could determine the final microstructure of the copper film. In the present work we examine the effect of twodoi:10.1557/proc-766-e2.2 fatcat:ahcsydq3lna4nim4hjoxclygyu