A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2007; you can also visit the original URL.
The file type is application/pdf.
Fabrication of GaAs-based photonic band gap materials
2000
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
Preserved Fulltext
A relatively simple technique for fabrication of GaAs-based quasi-three-dimensional photonic crystals has been investigated. Selective impurity-induced layer disordering and wet oxidation techniques are utilized. Fourier-transform infrared spectroscopy measurement reveals a stop band between 15 and 20 m for a sample with scattering center spacing of 6.3 m. Another narrow transmittance dip is observable in the wavelength range of 1.1-1.58 m, with an attenuation of 12 dB at 1.18 m. The process is
doi:10.1116/1.591457
fatcat:hgpbr65djrcwtjbgju5frix6ye