Fabrication of GaAs-based photonic band gap materials

W. D. Zhou, P. Bhattacharya, J. Sabarinathan, D. H. Zhu
2000 Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena  
A relatively simple technique for fabrication of GaAs-based quasi-three-dimensional photonic crystals has been investigated. Selective impurity-induced layer disordering and wet oxidation techniques are utilized. Fourier-transform infrared spectroscopy measurement reveals a stop band between 15 and 20 m for a sample with scattering center spacing of 6.3 m. Another narrow transmittance dip is observable in the wavelength range of 1.1-1.58 m, with an attenuation of 12 dB at 1.18 m. The process is
more » ... reproducible and lends itself to integration with other optoelectronic and electronic devices on the same substrate.
doi:10.1116/1.591457 fatcat:hgpbr65djrcwtjbgju5frix6ye