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A relatively simple technique for fabrication of GaAs-based quasi-three-dimensional photonic crystals has been investigated. Selective impurity-induced layer disordering and wet oxidation techniques are utilized. Fourier-transform infrared spectroscopy measurement reveals a stop band between 15 and 20 m for a sample with scattering center spacing of 6.3 m. Another narrow transmittance dip is observable in the wavelength range of 1.1-1.58 m, with an attenuation of 12 dB at 1.18 m. The process isdoi:10.1116/1.591457 fatcat:hgpbr65djrcwtjbgju5frix6ye