Numerical Performance Analysis of Carbon Nanotube (CNT) Embedded MOSFETs [chapter]

A. Akturk, G. Pennington, N. Goldsman
2004 Simulation of Semiconductor Processes and Devices 2004  
We analyze a novel MOSFET design that has semiconducting single-walled zig-zag Carbon Nanotubes (CNTs) in the channel. We also report on a modeling technique for simulating CNT-MOSFET devices. Our investigations have shown that CNT-MOSFETs employing small diameter CNTs (d=8Å) show low leakage and negative differential conductance. Midrange CNT-MOSFETs (d=13Å) show improved current drive. However larger diameter CNTs (d=17Å) result in degraded MOSFET performance due to effective punch-through
more » ... ve punch-through and bandoffsets.
doi:10.1007/978-3-7091-0624-2_36 fatcat:snofo2za25cedoa4unsmizjcs4