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Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes
2012
Chinese Physics B
Preserved Fulltext
The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 • C. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak
doi:10.1088/1674-1056/21/3/037304
fatcat:bpqfofmzjbgpxdkvnd2eizukjq