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Preparation of Epoxy/Organoclay Nanocomposites for Electrical Insulating Material Using an Ultrasonicator
Transactions on Electrical and Electronic Materials
In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 µm standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 µm. The drain current (I ON ), transconductance (g m ), substrate current (I SUB ), drain to source leakage current (I OFF ), and channel-hot-electron (CHE)doi:10.4313/teem.2011.12.3.93 fatcat:kcnhts4lzraqnlctf6x25475ti