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ACCELERATION 1/F NOISE IN SILICON MOSFETs
Le Journal de Physique Colloques
It is usually assumed that the l/f noise in Si-MOSFETs is limited by collision l/f noise. We found this to be the case for devices with relatively short channel lengths (L<lOpn) but for channels of intermediate length (10pm<L<194pm) we found that the Hooge parameter varies as L2. We attributed this to acceleration of the electrons by the applied field, accompanied by Bremsstrahlung emission and current l/f noise generation. This is a new noise source.doi:10.1051/jphyscol:1988430 fatcat:lr2f2il3qzailgrebavtpcgwzu