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Direct Observation of Gain Compression Mechanisms in PHEMT by RF Gate and Drain Currents
unpublished
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Average rf gate and drain currents can be used to determine gain compression mechanisms for PHEMTs with different pinch-off voltages. Knee voltage, pinch-off voltage, breakdown voltage and Imax clip output I-V waveform of a PHEMT and cause gain compression. We found that there is a distinct signature in average rf gate and drain currents to characterize each gain compression mechanism in PHEMTs. A PHEMT with low pinch-off voltage behaves the same in rf gate and drain currents as a PHEMT with
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