Flexible Write-Once–Read-Many-Times Memory Device Based on a Nickel Oxide Thin Film

Q. Yu, Y. Liu, T. P. Chen, Z. Liu, Y. F. Yu, H. W. Lei, J. Zhu, S. Fung
2012 IEEE Transactions on Electron Devices  
doi:10.1109/ted.2011.2179939 fatcat:ynhukovhirhe5kdqscfxn3c62u