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Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO

H. Alawadhi, S. Tsoi, X. Lu, A. K. Ramdas, M. Grimsditch, M. Cardona, R. Lauck
2007 Physical Review B  

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The temperature dependence of the A, B, and C excitons of ZnO, observed in modulated reflectivity spectra of 68 Zn 18 O and nat Zn nat O in the range 10-400 K, reveal the superposition of band-gap renormalization originating in electron-phonon interaction and volume changes associated with thermal expansion and ͑or͒ isotopic composition in combination with anharmonicity. At low temperatures, the A, B, and C excitons in natural ZnO reach limiting values depressed from their values for the
more » ... ely massive isotopes ͑the latter are free from electron-phonon interaction and anharmonicity͒. The C excitons of 68 Zn 18 O and nat Zn nat O converge with increasing temperature, demonstrating the independence of the band gap from isotopic mass at high temperatures.
doi:10.1103/physrevb.75.205207 fatcat:ha3ktjpijjfjfjb3hdcqp5xmwq
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H. Alawadhi, S. Tsoi, X. Lu, A. K. Ramdas, M. Grimsditch, M. Cardona, R. Lauck. "Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO." Physical Review B 75.20 (2007)