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Advanced HgCdTe technologies and dual-band developments
2008
Infrared Technology and Applications XXXIV
The Molecular Beam Epitaxy (MBE) approach was under investigation for several years to prepare both the very large array fabrication and the 3rd generation developments. This large step in Infrared (IR) detector mass production is also necessary for producing third generation of IR detectors such as bicolor and dual band FPAs which use more complex multi hetero-junctions architectures. These new advanced HgCdTe technologies necessary for third generation developments have been validated and
doi:10.1117/12.779902
fatcat:pn2sr343ebho3g4pcp3roklpn4