Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing

Akira HEYA, Shogo NISHIZAKI, Naoya KAWAMOTO, Keisuke OHDAIRA, Hideki MATSUMURA, Naoto MATSUO
2010 Journal of the Vacuum Society of Japan  
The eŠects of high nitrogen (N 2 ) pressure and thermal treatment on the adhesion between a siliconˆlm and a polyethersulfone (PES) substrate during crystallization by excimer laser annealing (ELA) were investigated using silicon nitride (SiN x ) as the barrierˆlm for the fabrication of polycrystalline silicon (poly Si) thin-ˆlm transistors on a plastic substrate. As the thickness of the SiN xˆl m increased from 50 to 150 nm at a gas pressure of 0.2 MPa,ˆlm exfoliation was suppressed. A poly
more » ... iˆlm with a crystalline fraction of 76 was obtained at an energy density of 200 mJ/cm 2 and a high pressure in N 2 atmosphere. In addition, thermal treatment before ELA was useful for improving the adhesion between the inorganicˆlm and the PES substrate.
doi:10.3131/jvsj2.53.692 fatcat:co26qorv5vcgzeejarhcvl76wi