The eŠects of high nitrogen (N 2 ) pressure and thermal treatment on the adhesion between a siliconˆlm and a polyethersulfone (PES) substrate during crystallization by excimer laser annealing (ELA) were investigated using silicon nitride (SiN x ) as the barrierˆlm for the fabrication of polycrystalline silicon (poly Si) thin-ˆlm transistors on a plastic substrate. As the thickness of the SiN xˆl m increased from 50 to 150 nm at a gas pressure of 0.2 MPa,ˆlm exfoliation was suppressed. A poly

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... iˆlm with a crystalline fraction of 76 was obtained at an energy density of 200 mJ/cm 2 and a high pressure in N 2 atmosphere. In addition, thermal treatment before ELA was useful for improving the adhesion between the inorganicˆlm and the PES substrate.