A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is application/pdf
.
Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
2010
Journal of the Vacuum Society of Japan
The eŠects of high nitrogen (N 2 ) pressure and thermal treatment on the adhesion between a siliconˆlm and a polyethersulfone (PES) substrate during crystallization by excimer laser annealing (ELA) were investigated using silicon nitride (SiN x ) as the barrierˆlm for the fabrication of polycrystalline silicon (poly Si) thin-ˆlm transistors on a plastic substrate. As the thickness of the SiN xˆl m increased from 50 to 150 nm at a gas pressure of 0.2 MPa,ˆlm exfoliation was suppressed. A poly
doi:10.3131/jvsj2.53.692
fatcat:co26qorv5vcgzeejarhcvl76wi