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Mott transition and collective charge pinning in electron doped Sr2IrO4
2018
Physical review B
We studied the in-plane dynamic and static charge conductivity of electron doped Sr2IrO4 using optical spectroscopy and DC transport measurements. The optical conductivity indicates that the pristine material is an indirect semiconductor with a direct Mott-gap of 0.55 eV. Upon substitution of 2% La per formula unit the Mott-gap is suppressed except in a small fraction of the material (15%) where the gap survives, and overall the material remains insulating. Instead of a zero energy mode (or
doi:10.1103/physrevb.98.045107
fatcat:xuowqrx3yzdqle4wjsyyrkvuxm