A hierarchy of hydrodynamic models for silicon carbide semiconductors

Orazio Muscato, Vincenza Di Stefano
2017 Communications in Applied and Industrial Mathematics  
The electro-thermal transport in silicon carbide semiconductors can be described by an extended hydrodynamic model, obtained by taking moments from kinetic equations, and using the Maximum Entropy Principle. By performing appropriate scaling, one can obtain reduced transport models such as the Energy transport and the drift-diffusion ones, where the transport coefficients are explicitly determined.
doi:10.1515/caim-2017-0013 fatcat:yshmzkx44fas3afordalw2sf6q