Coherent tunneling in a semiconductor system: Double barrier resonant-tunneling structure built in the Schottky barrier

S. D. Lin, C. P. Lee, V. V. Ilchenko, D. I. Sheka, O. V. Tretyak, A. M. Korol, I. V. Nosenko
2007 Journal of Physical Studies  
Resonant-tunneling processesing electrons in a system consisting of the double-barrier resonanttunneling structure built in the Schottky barrier are studied. It is shown that the coherent tunneling can take place in this system; both the transmission rates of electrons and the current-voltage characteristic are evaluated and analyzed for such a case. The theoretical results agree perfectly well with the data obtained from the especially performed experiment.
doi:10.30970/jps.11.294 fatcat:r7ujn53od5fzhg52qaueb4tnta