Analysis of Current Aggregation in Gate-Control Dual Direction Silicon Controlled Rectifier

Zeyu Zhong, Yang Wang, Xiangliang Jin, Yan Peng, Jun Luo, Jun Yang
2021 IEICE Electronics Express  
The current aggregation mechanism created by the gate structure is proposed for electrostatic discharging (ESD). Through device simulation, the size-expanded gate structure in gate-control dual-direction silicon controlled rectifier (GC-DDSCR) is found to aggregate the surface parasitic current path and the main SCR current path. The SCR current path is consequently twisted and extended to increase the holding voltage (Vh). Two GC-DDSCRs are fabricated in a 0.5μm CMOS technology and tested by
more » ... ogy and tested by transmission line pulse (TLP). The Vh increases from 13.84V to 16.44V as the gate size expands from 2.5μm to 4.5μm. The mechanism of current aggregation is verified.
doi:10.1587/elex.18.20210214 fatcat:oikk2jxbhje43mn3keo5dl4ofq