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A resistive-gate Al/sub 0.3/Ga/sub 0.7/As/GaAs 2DEG CCD with high charge-transfer efficiency at 1 GHz
1991
IEEE Transactions on Electron Devices
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The fabrication and performance of an AIo"Gao"As/GaAs modulation-doped resistive-gate charge-coupled device is reported. The two-dimensional electron gas (2DEG) CCD, implemented as a 32-stage four-phase delay line, is tested at both low (1-13 MHz) and high (0.6-1.0 GHz) frequency. It exhibits a room-temperature charge-transfer efficiency (CTE) of better than 0.999 at clock frequencies from 10 MHz up to 1 GHz without a fat-zero signal, and is limited by dark current below 10 MHz. The
doi:10.1109/16.75226
fatcat:o5ctl6y6rrbublkohgwkkzmt44