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層流方式光CVD法によるアモルファスシリコン膜形成方法 : 情報入力
Laminar flow photochemical vapor deposition method for preparing hydrogenated amorphous silicon film
1991
ITE Technical Report
Laminar flow photochemical vapor deposition method for preparing hydrogenated amorphous silicon film
Preserved Fulltext
A new , laminar flow photochemical vapQr depositiom methQd has been applied to prepare a − Si :H fi ] . 皿 s . The main feature of this method is introduction of Argon gas as a flow down gas through the lower part of the quartz window into the reaction cha 皿 ber to keep the window highly transparent , The high deposition rate bas been stably maintained
doi:10.11485/tvtr.15.77_3
fatcat:gdhnqxsi6vc2riuyz2eipmcigm