Precise lattice location of substitutional and interstitial Mg in AlN

L. M. Amorim, U. Wahl, L. M. C. Pereira, S. Decoster, D. J. Silva, M. R. da Silva, A. Gottberg, J. G. Correia, K. Temst, A. Vantomme
2013 Applied Physics Letters  
Published by the AIP Publishing Articles you may be interested in Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1xN Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery The lattice site location of radioactive 27 Mg implanted in AlN was determined by means of emission channeling. The majority of the 27 Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral
more » ... the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 Å experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites, in the context of the current debate, on Mg doped nitride semiconductors. V C 2013 AIP Publishing LLC. [http://dx.
doi:10.1063/1.4858389 fatcat:v5boefmco5clrl4f5rpmo6ebu4