A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2021; you can also visit the original URL.
The file type is
Published by the AIP Publishing Articles you may be interested in Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1xN Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery The lattice site location of radioactive 27 Mg implanted in AlN was determined by means of emission channeling. The majority of the 27 Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedraldoi:10.1063/1.4858389 fatcat:v5boefmco5clrl4f5rpmo6ebu4