Study on silicon for photovoltaic application using hot wire chemical vapor deposition techniques

M Abul Hossion, Professor Dr Zahid Hasan Mahmood
<span title="2017-06-20">2017</span> <i title="Zenodo"> Zenodo </i> &nbsp;
Large grain polycrystalline silicon thin film on low cost and robust substrate is an interesting area of research for photovoltaic devices. This film can be used to fabricate solar cell which has a potential to achieve 20% efficiency like multi crystalline silicon solar cell with the advantage of thin film fabrication techniques. In this thesis we have investigated the possibility of growing large grain (220) oriented poly crystalline silicon films, 2 to 3 micron thick, from silane‐hydrogen
more &raquo; ... ure, by hot wire chemical vapour deposition (HWCVD). Several substrates i) Si/SiO2, ii) TiO2 layer on glass, iii) textured nickel‐5% tungsten metal strip, iv) crystalline sapphire and v) alkali free borosilicate glass have been used in this work. The growth of intrinsic poly crystalline silicon film was performed starting with a thin nucleation layer at 400C followed by the thickening stage at 600C with higher silane concentration. We have optimized the growth conditions and one micron of well passivated hydrogenated (220) oriented polycrystalline film were grown successfully. We have used several characterization techniques for the evaluation of the optical, topographical and electrical properties of the film. The growth of boron doped poly crystalline and amorphous silicon film was also performed following by process similar to that used for intrinsic poly silicon film using HWCVD with the addition of diborane to the gas mixture for boron doping the silicon. The HWCVD system used for the synthesis of intrinsic and p‐type polycrystalline silicon films did not have provision for n‐type doping. For synthesis of phosphorous doped n‐ type silicon film, we initially explored doping intrinsic polycrystalline silicon film by using two different sources of phosphorous followed by Laser annealing. One approach used i) spin‐on phosphorous dopant film about one micron thick and the other approach used ii) phosphorous ion im [...]
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