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The authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts per centimetre (MV=cm). The proposed high field transport methodology is based on the ensemble Monte Carlo technique, with all major scattering mechanisms incorporated. As a test-bed for understanding II and hot electron effects, an n þ -n-n þ channel device is employed having adoi:10.1049/ip-opt:20030047 fatcat:ub2qvizfljcg5pbehiuq6d4bgq