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Modeling current transport in carbon nanotube transistors
2008
2008 IEEE International Conference on Electron Devices and Solid-State Circuits
Carbon nanotubes (CNTs) have been studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. To explore the physics of carbon nanotube field-effect transistors (CNT-FETs) self-consistent quantum mechanical simulations have been performed. Both the electron-photon and electron-phonon interactions in CNT-FETs have been analyzed numerically, employing the non-equilibrium Green's function formalism. The numerical challenges for the analysis of carbon
doi:10.1109/edssc.2008.4760743
fatcat:2lhkmuigavbodfsbvzzd77vw3a