Separation by implanted oxygen (SIMOX) materials are increasing importance in semiconductor manufacturing [1] . Very thin layers enhance the performance and lower the cost of the production. However, very thin layers are difficult to be obtained uniformly across the wafer. This study provided an insight for process control to obtain the thin layers uniformly by investigating flattening mechanisms during annealing. A set of samples were investigated after they were implanted with the same oxygen

more »

... dose of 4.5 × 10 17 O + /cm 2 at 65 keV using an Ibis 1000 high-current oxygen implanter, and were subsequently annealed at 1200 o C-1350 o C for different durations (0 -4 hours). The microstructures of SIMOX materials were then investigated using transmission electron microscopy (TEM) with a Hitachi 8100 TEM at 200 keV. In addition, the Si-SiO 2 interface topographies were analyzed using atomic force microscopy (AFM). To get access to the Si-SiO 2 interface, the native oxide and the top silicon layer were removed by a diluted HF solution and 22% TMAH solution, respectively.