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Flattening of the Si-SiO2 Interface in Ultra-Thin SIMOX Structures
Microscopy and Microanalysis
Separation by implanted oxygen (SIMOX) materials are increasing importance in semiconductor manufacturing  . Very thin layers enhance the performance and lower the cost of the production. However, very thin layers are difficult to be obtained uniformly across the wafer. This study provided an insight for process control to obtain the thin layers uniformly by investigating flattening mechanisms during annealing. A set of samples were investigated after they were implanted with the same oxygendoi:10.1017/s1431927605502897 fatcat:fr754niryngmjgijmrw5j76oga