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Free-and bound-exciton luminescences of GaN epitaxial layers grown by a sublimation technique on 6H-SiC substrates were investigated using time-integrated and time-resolved photoluminescence measurements at low temperatures. Lifetimes were determined for the donor-bound exciton at 3.4722 eV and for two acceptor-bound excitons with energies of 3.4672 eV and 3.459 eV. On the basis of our results we obtain an upper limit of the free-exciton oscillator strength of 0.0046 for GaN. Luminescencesdoi:10.1063/1.116703 fatcat:fwda4cykzrhmflokhrj5moeq6a