Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring

Maria Malits, Igor Brouk, Yael Nemirovsky
2018 Sensors  
This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage (V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute
more » ... temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K-500 K temperature range while consuming only 30 µW during operation.
doi:10.3390/s18051629 pmid:29783742 pmcid:PMC5982330 fatcat:f53ok6cq3jhbpkccsisg5nrrha