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Crystallization Kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In Thin Films

Sherchenkov Alexey, Lazarenko Petr, Timoshenkov Sergey, Kozyukhin Sergey
2016 Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering   unpublished

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In this work mechanism and kinetics of crystallization for thin films on the basis of Ge-Sb-Te-Bi and Ge-Sb-Te-In perspective for phase change memory application were investigated. Possible data processing and storage times of the PCM cell were estimated. It was shown that PCM cell based on Ge 2 Sb 2 Te 5 +0.5 wt. % Bi have minimum data processing and maximum data storage times in comparison with the other investigated materials.
doi:10.2991/icmmse-16.2016.62 fatcat:ddrds5iphrhurjju6hgv36x5iq
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Sherchenkov Alexey, Lazarenko Petr, Timoshenkov Sergey, Kozyukhin Sergey. "Crystallization Kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In Thin Films." Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering (2016)