Ph o rol un i n esc cn ce S r o b il iry of Po l! mc r-Coo ted poro us S i I i

Ghatib Bassorn, Rashezd'
unpublished
The p hotol lnihe tcen k eabi l itt of the pora,s siticon praduce.t br lase dtctt etchihe ofsilicon has been studktl. t:te hoe e pt.,/et a ntethatl b;nprcv nt pt, stobiiity af lE potous rtuute lhe porots sbuctwe was coate.t bf o thjh paunul tulv trhich i\ transpdtehl la thc risible lij.ht entte.l br the Si na otrtajties rhl "-" aat a,1, d. t b, a p"t,-"t ta.. arJ tt.? {: o, tt / _ _,n,t t lilicon haroc,ystallitcs doe' nal rcduce ||hh the azks tjne. I has beeh oble ed ha1 llE p.lrhu taated IA
more » ... p.lrhu taated IA Nahpks arc che Xa r :labi ahd that teatls tb inFow the phatoltnikeeare stabilit! otthe parcus liliattuth aqihq tine. 4.,t, rt A, ,!.r,-L) jtr-!/a rh*yr eliLt A-.ral i+1& err4.t s.t-.!] ,!+L'11 ia ct-, ! uLij4l ,dJ :r,' 4i c,rn tt !! ,?r,r ,rat! itlu 4ratt;!-Lr. igl! iiJ, t4! e! ra-,r e,t-.t "*t #,ff) .tutt-Jili lt xt a. c4..1 lJ-is ct;*,t L; /:i../11 f.1.44 oJ4tlJt qJr4t ab!)l ilrtJij-l Oq b,J rtr ntt!-,11 e.h*)."th einJ q4..8 ;rfi-AlU 'n Ot a!, ,L_*!Jt 14L)JA. g Cryshuine silicon has consilered rs an essenrial matrial in the electronic induslries, bu iE lFplication is lnnited n1 oploeleclronics due ro its i.dte.r ba.d Alp vhich makes lhe ratcnal nr.ii.ienr liglrr emifl,ff ill. lhe discolery of ifiense visible phoroluninescen.. ar rooh remFeulur€ tu,n siljcon nmocryrilllitcs and pools silicon nas alftacted a gnrt inleEsl last deGde [2-51 Mudr elloll Las 6een focused on rhl co rcl of llE linhr emission p.openles dd the nabiliry of nE elc.to md photohmjnescence oflhc conshtent silicon haiocas1allires [6 8] Porous silicon (PS) is r complex n.tqort of porcs scFaraod b! 6ii walh consnting silicon danocrysrallnds of diiidox sizs f9l uslalll, ls is fab cated by electrochemical ebning ot siricon $!fer in H[ acid flo ll] ,rar Civs bmad phololmine$encc (Pl) bed chmctdislics due lo rhe large l,horocbeniml elching by hser lt2-171 provides an altemaiilc nrelhod ro produce and conlrol lhe size and the enrission clDrac&nsdcs of PS. lhc phoroluninescoce ton silicon nanocryslallires is onen allribured ro qwrum connncncnt eaieor.)he qu,ntuD confinemcn nrodel su$ests lhal eledon confine.ur within drc n oneter sizc cr!$allites lelds io cnlaigc rhe b d sap md also blle shiar rhe b.nd gap towlrd the vhible resion ll8l. Hosevq, other model rlis explained the phololuminescmce liom sili.on n&ocr,vstallites s a resull of
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