The recombination losses in ancillary and absorber layers of solar cells based on n-ZnS / p-CdTe and n-CdS / p-CdTe heterojunctions with ITO and ZnO current-collecting frontal contacts were calculated. The effect of recombination losses in solar cells with structure ITO(ZnO) / CdS(ZnS) / CdTe on the short-circuit current (Jsc) and the efficiency (η) of photovoltaic devices at different window layer thickness CdS (ZnS) (50-300 nm) and at invariable of current-collecting layer thickness (200 nm)

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... ere investigated. The influence of recombination velocity (S 10 7-10 9 cm/s) on the main features of solar cells was researched. It was established that solar cells with structure ZnO/ZnS/CdTe at the concentration of uncompensated acceptors in absorber layer (Na-Nd) 10 15-10 17 cm-3 and at window layer thickness 50 nm at recombination velocity S 10 7 cm/s have the highest efficiency values (15.9-16.1 %).