Introduction GaSb is one of the most popular III-V semiconductors. The structural and electronic properties are similar to those of IV semiconductors. The III-V semiconductors have the ionic characters in chemical bonding compared to IV semiconductors. For the purpose of elucidating the effects of the ionicity in chemical bonding on the pressure-induced structural change of the liquid, we have investigated the structure of the liquid GaSb up to 9.0 GPa. Experimental The X-ray diffraction

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... s were taken by the energy-dispersive method using the synchrotron radiation source and the multi-anvil cell high-pressure apparatus. The pressure and temperature conditions of the measurements are shown in Fig.1 . The data were taken by MAXIII installed at BL-14C2. The effect of the absorption of X-ray by the sample was corrected.