GROWTH OF WIDE BAND-GAP II-VI COMPOUND SUBSTRATES WITH CONTROLLED ELECTRIC PARAMETERS

G Colibaba, E Goncearenco, D Nedeoglo, N Nedeoglo
unpublished
Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn+Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area
more » ... rates with controlled electric parameters are estimated.
fatcat:lkvq6p7fovgtlluqxb4ledwtmm