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Design and Performance Comparison of Symmetric and Asymmetric Underlap Dual-K Spacer Finfets
unpublished
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This paper investigates the innovation features of Symmetric and Asymmetric FinFET devices with dual-k spacer over traditional FinFET. The designed FinFET integrates three advanced technologies i.e. FinFET, ultra-thin body (UTB) and asymmetric Dual-k spacer on a substrate of silicon-on-insulator (SOI). Recently, Dual-k dielectric spacer materials are much significant for research because of their better electrical control and provide more immunity against short channel effects (SCEs) in
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