Design and Performance Comparison of Symmetric and Asymmetric Underlap Dual-K Spacer Finfets

Sanamdeep Singh, Singh Sandeep, Gill, Er Navneet Kaur
This paper investigates the innovation features of Symmetric and Asymmetric FinFET devices with dual-k spacer over traditional FinFET. The designed FinFET integrates three advanced technologies i.e. FinFET, ultra-thin body (UTB) and asymmetric Dual-k spacer on a substrate of silicon-on-insulator (SOI). Recently, Dual-k dielectric spacer materials are much significant for research because of their better electrical control and provide more immunity against short channel effects (SCEs) in
more » ... e devices. This work presents symmetric and asymmetric dual-k dielectric spacer in the underlap areas of FinFET and performance has been analyzed.