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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
2006
Semiconductor Physics, Quantum Electronics & Optoelectronics
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Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiO x layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiO x ) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiO x layers leads to the considerable changes in PL spectra effecting both on the band
doi:10.15407/spqeo9.01.009
fatcat:jhtt2shs25hp5khm46hr7cmdze