Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

I.Z. Indutnyy, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine E-mail: indutnyy@isp.kiev.ua
2006 Semiconductor Physics, Quantum Electronics & Optoelectronics  
Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiO x layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiO x ) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiO x layers leads to the considerable changes in PL spectra effecting both on the band
more » ... pe and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO 2 layers is shown.
doi:10.15407/spqeo9.01.009 fatcat:jhtt2shs25hp5khm46hr7cmdze