Monolithic mass sensors for ultrasensitive mass detection in air conditions have been fabricated using a conventional 0.35 m complementary metal-oxide-semiconductor ͑CMOS͒ process. The mass sensors are based on electrostatically excited submicrometer scale cantilevers integrated with CMOS electronics. The devices have been calibrated obtaining an experimental sensitivity of 6 ϫ 10 −11 g/cm 2 Hz equivalent to 0.9 ag/ Hz for locally deposited mass. Results from time-resolved mass measurements are

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... also presented. An evaluation of the mass resolution have been performed obtaining a value of 2.4ϫ 10 −17 g in air conditions, resulting in an improvement of these devices from previous works in terms of sensitivity, resolution, and fabrication process complexity.