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In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic structure of the Si/SiO2 interface roughness directly by using a 3D finite element technique. The results show that 1) SRS reduces the electron density of states in the channel, which increases the SNWT threshold voltage, and 2) the SRS in SNWTs becomes moredoi:10.1063/1.2001158 fatcat:kfh7c6gmn5agpcut7ykpexredm