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Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates
2015
Advances in Materials Science and Engineering
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This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10–40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one
doi:10.1155/2015/537163
fatcat:iiysemdrsvfexb56622dpsj7ry