Self-assembly on (111)-oriented III-V surfaces

Paul J. Simmonds, Minjoo Larry Lee
2011 Applied Physics Letters  
We demonstrate the self-assembly of tensile strained GaP into three-dimensional dots on GaAs(111)A. Size and areal density of the dislocation-free GaP dots are readily tunable with both substrate temperature and deposition thickness. GaP dot growth obeys island scaling theory, allowing us to predict dot size distributions a priori.
doi:10.1063/1.3640501 fatcat:dbymy3orbvaufbbo66kbzhmpny