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Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots
Physical Review B (Condensed Matter)
Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples, all having the same density, allows us to study the influence of the barrier height on the temperature dependence of the photoluminescence ͑PL͒. The integrated PL follows an Arrhenius-type behavior, with activation energies matching the barrier heights. However, the quenching occurs at lower temperatures as the barrierdoi:10.1103/physrevb.67.245318 fatcat:litnk26k4zfbvpmisl2alpxem4