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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
2011
Journal of Applied Physics
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We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small
doi:10.1063/1.3633742
fatcat:r7dxyontk5dnpina4ptsuc5spq