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Projected Performance of Sub-10 nm GaN-based Double Gate MOSFETs
2017
Circulation in Computer Science
GaN-based double gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs) in sub-10 nm regime have been designed for the next generation logic applications. To rigorously evaluate the device performance, non-equilibrium Green's function formalism are performed using SILVACO ATLAS. The device is turn on at gate voltage, VGS =1 V while it is going to off at VGS = 0 V. The ON-state and OFF-state drain currents are found as 12 mA/μm and ~10-8 A/μm, respectively at the drain voltage, VDS
doi:10.22632/ccs-2017-251-50
fatcat:gtix4y2itrfmdcyzqezcafmrzu