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A 29 dBm CMOS class-E power amplifier with 63% PAE using negative capacitance
2009
2009 IEEE Custom Integrated Circuits Conference
Preserved Fulltext
This paper proposes class-E power amplifier including negative capacitance to optimize shunt drain capacitance. The negative capacitance improves efficiency, compensates for surplus shunt drain capacitance resulting from parasitic capacitance, and is implemented without an external circuit. A cascode single-ended class-E RF power amplifier including driver stage is fabricated using a 0.13-µm standard CMOS technology delivering 29 dBm with 66% drain efficiency and 63% poweradded efficiency at 1.8 GHz.
doi:10.1109/cicc.2009.5280807
dblp:conf/cicc/SongLLN09
fatcat:lb3zc4jjnvhn5npup66t3o2mly