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The influence of hydrogen plasma treatment before atomic layer deposition of aluminum oxide on In 0:53 Ga 0:47 As is investigated. Experiments on untreated, trimethylaluminum-treated, hydrogen-plasma treated, and iterative hydrogen plasma/trimethylaluminum-treated samples are compared in the context of interface trap density, D it . Through the conductance method, it was found that five cycles of two s, 20 mT, 100 W hydrogen plasma alternating with 40 msS of trimethylaluminum dose prior todoi:10.1143/apex.4.091102 fatcat:ets6jeohybeqxgp5teraqqcula