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Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes
Applied Physics Express
Si-doped -(Al 0.26 Ga 0.74 ) 2 O 3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy Praneeth Ranga et al -This content was downloaded from IP address 126.96.36.199 on 25/03Ga 2 O 3 vertical trench Schottky barrier diodes with four different fin-channel orientations are realized on (001) substrates and compared. Finchannels along the  direction with (100)-like sidewalls result in the highest forward current, while other channel orientations all lead to a shallowdoi:10.7567/1882-0786/ab206c fatcat:pdcmbjlmmjajzmhlxz2iegtosa