A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is application/pdf
.
Random telegraph noise in highly scaled nMOSFETs
2009
2009 IEEE International Reliability Physics Symposium
Recently, 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion layer and the bulk dielectric defects via elastic tunneling. In this study, we extracted the characteristic capture and emission time constants from RTN in highly scaled nMOSFETs and showed that they are inconsistent with the elastic tunneling
doi:10.1109/irps.2009.5173283
fatcat:ge72yibyajexlinaowfze74fpq