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Hydrogenation of transistors fabricated in polycrystalline-silicon films
1980
IEEE Electron Device Letters
Preserved Fulltext
Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to Improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.
doi:10.1109/edl.1980.25272
fatcat:ivynunju3nacjijjumhbl6tiru