Hydrogenation of transistors fabricated in polycrystalline-silicon films

T.I. Kamins, P.J. Marcoux
1980 IEEE Electron Device Letters  
Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to Improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.
doi:10.1109/edl.1980.25272 fatcat:ivynunju3nacjijjumhbl6tiru