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2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics
We have designed a GaAs/AlGaAs detector with a targeted peak frequency of 3 THz (100 µm) in an effort to extend the successful implementation of QWIP (Quantum Well Infrared Photodetector) arrays to the terahertz range. A simple multilayer structure has 18-nm GaAs QWs sandwiched between AlGaAs barriers with an Al alloy fraction of 2%. Despite the low Al content (2%), we obtained consistent results with MBE growth and could control the level of dark current and the impedance of fabricated devicesdoi:10.1109/icimw.2007.4516424 fatcat:cjr47dz4njczjapvbqn4bs6hma